Electronic Magnetic and Optical Materials 2nd Edition by Pradeep Fulay, Jung-Kun Lee 1498701730 9781498701730

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ISBN-10 :  1498701730 

ISBN-13 :  9781498701730

Author:  Pradeep Fulay, Jung-Kun Lee 

This book integrates materials science with other engineering subjects such as physics, chemistry and electrical engineering. The authors discuss devices and technologies used by the electronics, magnetics and photonics industries and offer a perspective on the manufacturing technologies used in device fabrication. The new addition includes chapters on optical properties and devices and addresses nanoscale phenomena and nanoscience, a subject that has made significant progress in the past decade regarding the fabrication of various materials and devices with nanometer-scale features.

Electronic Magnetic and Optical Materials 2nd table of contents:

Chapter 1 Introduction
1.1 Introduction
1.2 Classification of Materials
1.3 Crystalline Materials
1.4 Ceramics, Metals and Alloys, and Polymers
1.4.1 Interatomic Bonds in Materials
1.5 Functional Classification of Materials
1.6 Crystal Structures
1.7 Directions and Planes in Crystal Structures
1.7.1 Miller Indices for Directions
1.7.2 Miller Indices for Planes
1.7.3 Miller–Bravais Indices for Hexagonal Systems
1.7.4 Interplanar Spacing
1.8 Interstitial Sites or Holes in Crystal Structures
1.9 Coordination Numbers
1.10 Radius Ratio Concept
1.11 Crystal Structures of Different Materials
1.11.1 Structure of Sodium Chloride
1.11.2 Structure of Cesium Chloride
1.11.3 Diamond Cubic Structure
1.11.4 Zinc Blende Structure
1.11.5 Wurtzite Structure
1.11.6 Fluorite and Antifluorite Structure
1.11.7 Corundum Structure
1.11.8 Perovskite Crystal Structure
1.11.9 Spinel and Inverse Spinel Structures
1.12 Defects in Materials
1.13 Point Defects in Ceramic Materials
1.14 Kröger–Vink Notation for Point Defects
1.15 Dislocations
1.16 Stacking Faults and Grain Boundaries
1.17 Microstructure–Property Relationships
1.17.1 Grain Boundary Effects
1.17.2 Grain Size Effects
1.17.3 Microstructure-Insensitive Properties
1.18 Amorphous Materials
1.18.1 Atomic Arrangements in Amorphous Materials
1.18.2 Applications of Amorphous Materials
1.19 Nanostructured Materials
1.20 Defects in Materials: Good News or Bad News?
Problems
Glossary
References
Chapter 2 Electrical Conduction in Metals and Alloys
2.1 Introduction
2.2 Ohm’s Law
2.3 Sheet Resistance
2.4 Classical Theory of Electrical Conduction
2.5 Drift, Mobility, and Conductivity
2.6 Electronic and Ionic Conductors
2.7 Resistivity of Metallic Materials
2.7.1 Effect of Thermal Expansion
2.8 Joule Heating or I2R Losses
2.9 Dependence of Resistivity on Thickness
2.10 Chemical Composition–Microstructure–Conductivity Relationships in Metals
2.10.1 Influence of Atomic-Level Defects
2.10.2 Influence of Impurities
2.11 Resistivity of Metallic Alloys
2.12 Limitations of the Classical Theory of Conductivity
2.13 Quantum Mechanical Approach to the Electron Energy Levels in an Atom
2.14 Electrons in a Solid
2.15 Band Structure and Electric Conductivity of Solids
2.16 Fermi Energy and Fermi Level
2.17 Comparison of Classical Theory and the Quantum Mechanical Approach for Electrical Conduction
Problems
Glossary
References
Chapter 3 Fundamentals of Semiconductor Materials
3.1 Introduction
3.2 Intrinsic Semiconductors
3.3 Temperature Dependence of Carrier Concentrations
3.4 Band Structure of Semiconductors
3.5 Direct and Indirect Band Gap Semiconductors
3.6 Applications of Direct Band Gap Materials
3.7 Motions of Electrons and Holes: Electric Current
3.8 Extrinsic Semiconductors
3.9 Donor-Doped (n-Type) Semiconductors
3.10 Acceptor-Doped (p-Type) Semiconductors
3.11 Amphoteric Dopants, Compensation, and Isoelectronic Dopants
3.12 Dopant Ionization
3.13 Conductivity of Intrinsic and Extrinsic Semiconductors
3.14 Effect of Temperature on the Mobility of Carriers
3.15 Effect of Dopant Concentration on Mobility
3.16 Temperature and Dopant Concentration Dependence of Conductivity
3.17 Effect of Partial Dopant Ionization
3.18 Effect of Temperature on the Band Gap
3.19 Effect of Dopant Concentration on the Band Gap
3.20 Effect of Crystallite Size on the Band Gap
3.21 Semiconductivity in Ceramic Materials
Problems
Glossary
References
Chapter 4 Fermi Energy Levels in Semiconductors
4.1 Fermi Energy Levels in Metals
4.2 Fermi Energy Levels in Semiconductors
4.3 Electron and Hole Concentrations
4.4 Fermi Energy Levels in Intrinsic Semiconductors
4.5 Carrier Concentrations in Intrinsic Semiconductors
4.6 Fermi Energy Levels in n-Type and p-Type Semiconductors
4.7 Fermi Energy as a Function of the Temperature
4.8 Fermi Energy Positions and the Fermi–Dirac Distribution
4.9 Degenerate or Heavily Doped Semiconductors
4.10 Fermi Energy Levels Across Materials and Interfaces
Problems
Glossary
References
Chapter 5 Semiconductor p-n Junctions
5.1 Formation of a p-n Junction
5.2 Drift and Diffusion of Carriers
5.3 Constructing the Band Diagram for a p-n Junction
5.4 Calculation of Contact Potential
5.5 Space Charge at the p-n Junction
5.6 Electric Field Variation across the Depletion Region
5.7 Variation of Electric Potential
5.8 Width of the Depletion Region and Penetration Depths
5.9 Diffusion Currents in a Forward-Biased p-n Junction
5.10 Drift Current in Reverse-Biased p-n Junction
5.11 Overall I–V Characterstics in a p-n Junction
5.12 Diode Based on a p-n Junction
5.13 Reverse-Bias Breakdown
5.14 Zener Diodes
Problems
Glossary
References
Chapter 6 Semiconductor Devices
6.1 Metal–Semiconductor Contacts
6.2 Schottky Contacts
6.2.1 Band Diagrams
6.2.2 Surface Pinning of the Fermi Energy Level
6.2.3 Current–Voltage Characteristics for Schottky Contacts
6.2.4 Advantages of Schottky Diodes
6.3 Ohmic Contacts
6.3.1 Band Diagram
6.4 Solar Cells
6.5 Light-Emitting Diodes
6.5.1 Operating Principle
6.5.2 LED Materials
6.5.3 LEDs Based on Indirect Band Gap Materials
6.5.4 LED Emission Spectral Ranges
6.5.5 I–V Curve for LEDs
6.5.6 LED Efficiency
6.5.7 LED Packaging
6.6 Bipolar Junction Transistor
6.6.1 Principles of Operation of the Bipolar Junction Transistor
6.6.2 Bipolar Junction Transistor Action
6.6.3 Current Flows in an npn Transistor
6.6.4 Transistor Currents and Parameters
6.6.4.1 Collector Current
6.6.4.2 Emitter Current
6.6.4.3 Base Current
6.6.5 Role of Base Current
6.6.6 Transistor Operating Modes
6.6.7 Current–Voltage Characteristics of the Bipolar Junction Transistor
6.6.8 Current Flows in a pnp Transistor
6.6.9 Applications of Bipolar Junction Transistors
6.7 Field-Effect Transistors
6.8 Types of Field-Effect Transistors
6.9 Mesfet I–V Characteristics
6.9.1 MESFET with No Bias
6.9.2 MESFET with a Gate Bias
6.10 Metal Insulator Semiconductor Field-Effect Transistors
6.11 Metal Oxide Semiconductor Field-Effect Transistors
6.11.1 MOSFET in Integrated Circuits
6.11.2 Role of Materials in MOSFET
6.11.3 NMOS, PMOS, and CMOS Devices
6.11.4 Enhancement-Mode MOSFET
6.11.5 Mechanism for Enhancement MOSFET
6.11.6 Depletion-Mode MOSFET
Problems
Glossary
References
Chapter 7 Linear Dielectric Materials
7.1 Dielectric Materials
7.1.1 Electrostatic Induction
7.2 Capacitance and Dielectric Constant
7.2.1 Parallel-Plate Capacitor Filled with a Vacuum
7.2.2 Parallel-Plate Capacitors with an Ideal Dielectric Material
7.3 Dielectric Polarization
7.4 Local Electric Field (Elocal)
7.5 Polarization Mechanisms—Overview
7.6 Electronic or Optical Polarization
7.6.1 Electronic Polarization of Atoms
7.6.2 Electronic Polarizability of Ions and Molecules
7.7 Ionic, Atomic, or Vibrational Polarization
7.8 Shannon’s Polarizability Approach for Predicting Dielectric Constants
7.8.1 Outline of the Approach
7.8.2 Limitations of Shannon’s Approach
7.9 Dipolar or Orientational Polarization
7.10 Interfacial, Space Charge, or Maxwell–Wagner Polarization
7.11 Spontaneous or Ferroelectric Polarization
7.12 Dependence of the Dielectric Constant on Frequency
7.12.1 Connection to the Optical Properties: Lorentz–Lorenz Equation
7.13 Complex Dielectric Constant and Dielectric Losses
7.13.1 Complex Dielectric Constant
7.13.2 Real Dielectrics and Ideal Dielectrics
7.13.3 Frequency Dependence of Dielectric Losses
7.13.4 Giant Dielectric Constant Materials
7.14 Equivalent Circuit of a Real Dielectric
7.15 Impedance (Z) and Admittance (Y)
7.16 Power Loss in a Real Dielectric Material
7.16.1 Concept of tan δ
7.17 Equivalent Series Resistance and Equivalent Series Capacitance
Problems
Glossary
References
Chapter 8 Optical Properties of Materials
8.1 Description of Light as an Electromagnetic Wave and its Connection to the Physical Properties of Optical Materials
8.2 Refractive Index: A Factor Determining the Speed of an Electromagnetic Wave
8.3 Origin of the Refractive Index: Induced Polarization of a Medium
8.3.1 Response of Free Electrons to an Electromagnetic Wave: A Case of Metals
8.3.2 Response of Bound Electrons over an Electromagnetic Wave: A Case of Dielectrics
8.4 Change in Light Traveling Direction at a Material Interface: Refraction and Reflectance
8.4.1 Refraction and Reflection of an Electromagnetic Wave at a Flat Interface
8.4.2 Power Distribution Between Refracted Light and Reflected Light at a Flat Interface
8.4.2.1 A Case of Normal Incidence
8.4.2.2 A Case of Oblique Incidence
8.5 Extinction of light: scattering and absorption
8.5.1 Scattering at Rough Surface or Fine Objects
8.5.1.1 Diffuse Reflection
8.5.1.2 Rayleigh Scattering
8.5.1.3 Mie Scattering
8.5.2 Attenuation of Light by Absorption
8.5.3 Quantitative Expression of Extinction: Beer–Lambert law
8.6 Effects of Scattering, Reflectance, and Absorption of Light
8.6.1 Color of Materials
8.6.2 Results of Energy Loss of Excited Electrons by Light Absorption
8.7 Application of light–matter interaction
8.7.1 Antireflection Coating
8.7.2 Optical Fibers
8.7.3 Light-Emitting Diodes
8.7.4 Laser
Problems
References
Bibliography
Chapter 9 Electrical and Optical Properties of Solar Cells
9.1 What is a Solar Cell?
9.2 Operation Principle of p-n Junction-TYPE Semiconductor Solar Cells
9.2.1 Current–Voltage Characteristics of p-n Junction-Type Semiconductor Solar Cells
9.2.2 Fill Factor, Power Conversion Efficiency, and Quantum Yield of a Solar Cell
9.3 Physical Events Underlying p-n Junction-TYPE Solar Cells
9.3.1 Changes in Fermi Energy Level under Illumination
9.3.2 Generation, Recombination, and Transport of Electrons and Holes
9.3.2.1 Continuity Equation in a Neutral Semiconductor at Quasi-Equilibrium
9.3.2.2 Photogenerated Carrier Transport through Diffusion and Drift in a Neutral Semiconductor at Quasi-Equilibrium
9.3.2.3 Photogenerated Carrier Transport in a Depletion Region of the p-n Junction
9.4 Factors Limiting Power Conversion of p-n Junction-TYPE Solar Cells
9.4.1 Theoretical Limit of PCE
9.4.2 Additional Power Loss Mechanisms in Real p-n Junction-Type Solar Cells
9.4.3 Factors Influencing Solar Cell Operation
9.5 Design of High-PERFORMANCE p-n Junction-TYPE Semiconductor Solar Cells
9.5.1 Light Management for Improved Light Absorption
9.5.2 Enhanced Collection of Photogenerated Carriers
9.6 Emerging Solar Cells not Using p-n Junction of Inorganic Semiconductors
Problems
References
Chapter 10 Ferroelectrics, Piezoelectrics, and Pyroelectrics
10.1 Ferroelectric Materials
10.1.1 Ferroelectricity in Barium Titanate
10.1.2 Ferroelectric Domains
10.1.3 Dependence of the Dielectric Constant of Ferroelectrics on Temperature and Composition
10.2 Relationship of Ferroelectrics and Piezoelectrics to Crystal Symmetry
10.3 Electrostriction
10.4 Ferroelectric Hysteresis Loop
10.4.1 Trace of the Hysteresis Loop
10.5 Piezoelectricity
10.5.1 Origin of the Piezoelectric Effect in Ferroelectrics
10.6 Direct and Converse Piezoelectric Effects
10.7 Piezoelectric Behavior of Ferroelectrics
10.8 Piezoelectric Coefficients
10.9 Tensor Nature of Piezoelectric Coefficients
10.9.1 Conventions for Directions
10.9.2 General Notation for Piezoelectric Coefficients
10.9.3 Signs of Piezoelectric Coefficients
10.10 Relationship Between Piezoelectric Coefficients
10.11 Applications of Piezoelectrics
10.12 Devices Based on Piezoelectrics
10.12.1 Expander Plate
10.13 Technologically Important Piezoelectrics
10.14 Lead Zirconium Titanate
10.14.1 Piezoelectric Polymers
10.15 Applications and Properties of Hard and Soft Lead Zirconium Titanate Ceramics
10.16 Electromechanical Coupling Coefficient
10.17 Illustration of an Application: Piezoelectric Spark Igniter
10.18 Recent Developments
10.18.1 Strain-Tuned Ferroelectrics
10.18.2 Lead-Free Piezoelectrics
10.19 Piezoelectric Composites
10.20 Pyroelectric Materials and Devices
10.20.1 Pyroelectric Detectors for Infrared Detection and Imaging
Problems
Glossary
References
Chapter 11 Magnetic Materials
11.1 Introduction
11.2 Origin Of Magnetism
11.3 Magnetization (M), Flux Density (B), Magnetic Susceptibility (χm), Permeability (μ), And Relative Magnetic Permeability (μr)
11.3.1 Magnetizing Field (H), Magnetization (M), and Flux Density (B)
11.3.2 Magnetic Susceptibility (χm) and Magnetic Permeability (μ)
11.3.3 Demagnetizing Fields
11.3.4 Flux Density in Ferromagnetic and Ferrimagnetic Materials
11.4 Classification of Magnetic Materials
11.4.1 Diamagnetic Materials
11.4.2 Paramagnetic Materials
11.4.3 Superparamagnetic Materials
11.4.4 Antiferromagnetic Materials
11.4.5 Ferromagnetic and Ferrimagnetic Materials
11.5 Other Properties of Magnetic Materials
11.5.1 Curie Temperature (Tc)
11.5.2 Magnetic Permeability (μ)
11.5.3 Coercive Field (Hc)
11.5.4 Nucleation and Pinning Control of Coercivity
11.5.5 Magnetic Anisotropy
11.5.6 Magnetic Domain Walls
11.5.7 180° and Non-180° Domain Walls
11.5.8 Maximum Energy Products for Magnets
11.5.9 Magnetic Losses
11.6 Magnetostriction
11.7 Soft and Hard Magnetic Materials
11.8 Hard Magnetic Materials
11.9 Isotropic, Textured (Oriented), and Bonded Magnets
11.10 Soft Magnetic Materials
11.11 Magnetic Data Storage Materials

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Tags: Electronic Magnetic, Optical Materials, Pradeep Fulay, Jung Kun Lee