Compound Semiconductors Physics Technology and Device Concepts 1st Edition by Ferdinand Scholz 9781315229317 1351858718

1. Basics

1.1 What Is a Semiconductor?

1.2 Naive Band Diagram

1.3 Crystal Lattice: Basics

1.3.1 Crystal Planes, Miller Indices

1.3.2 Reciprocal Lattice

1.4 More Details about Band Structure

1.4.1 Insert: Very Short Introduction to Quantum Mechanics

1.4.2 Schrödinger Equation and Dispersion Relation

1.4.3 Short Summary Up to Now

1.5 Effective Mass

1.6 Movement of Carriers: Concept of Hole

1.7 Real Band Structures

1.8 Temperature Dependence of Lattice Constant and Band Gap

1.9 Interaction with Light

1.10 Carrier Statistics

1.10.1 Density of States

1.10.2 Fermi Distribution

1.11 Defects in Semiconductors

2. Introduction to Compound Semiconductors

3. Bulk Crystal Growth

3.1 Czochralski Method

3.2 Bridgman Crystal Growth

3.3 Wafer Preparation

4. Epitaxial Methods

4.1 Liquid Phase Epitaxy (LPE)

4.1.1 Control of Growth Rate and Layer Thickness

4.1.2 LPE Equipment

4.2 Vapor Phase Epitaxy (VPE)

4.3 Metalorganic Vapor Phase Epitaxy

4.4 Molecular Beam Epitaxy

4.4.1 Equipment Details

4.5 Comparison of Epitaxial Methods

5. Electrical Properties of Semiconductors/Electrical Characterization

5.1 Carrier Concentration and Doping

5.2 Carrier Mobility

5.3 Measurement of Electrical Properties

5.3.1 HallEffect

5.3.2 C–V Profiling

5.4 Secondary Ion Mass Spectrometry

6. Optical Processes in Semiconductors: Optical Spectroscopy

6.1 Basic Optical Processes

6.2 Steady-State Excitation

6.3 Optical Characterization Methods

6.3.1 Photoluminescence

6.3.2 Absorption

6.3.3 Lateral Absorption and Gain Spectroscopy

6.3.4 Fourier Spectroscopy

6.3.5 Other Related Methods

6.4 Some Technical Details

7. X-Ray Diffraction

7.1 Basics

7.2 What Can Be Measured?

7.3 Diffractometer Equipment

8. Quantum Wells

8.1 Semiconductor Heterojunction

8.2 Quantum Well: Eigenstates

8.3 Density of States

8.4 Behavior at k→ = 0

8.5 High Carrier Mobility in a Quantum Well

8.6 Coupling of Several Quantum Wells: Resonant Tunneling

9. Strain

9.1 Elastic Deformation of a Solid

9.2 Influence on Electronic Band Structure

9.3 Critical Thickness

9.4 Usefulness of Strain

10. Low-Dimensional Systems

10.1 Band Structure, etc

10.2 Fabrication of Low-Dimensional Structures

10.3 Properties of Self-Assembled Dots

11. Group III Nitrides

11.1 Basic Properties

11.2 Bulk Material, Substrates

11.3 Hetero-Epitaxy, Defect Reduction

11.4 Doping of GaN

11.5 Ternary Alloys

11.6 Polarization and Piezoelectricity

11.7 Diluted Nitrides

12. Optoelectronic Devices

12.1 Light-Emitting Diode

12.1.1 Optical Transitions

12.1.2 Internal and External Efficiencies

12.1.3 Luminous Efficacy

12.1.4 LED Colors, White LEDs

12.1.5 LED Efficiencies

12.2 Semiconductor Laser Diodes

12.2.1 Gain

12.2.2 Resonator and Feedback

12.2.3 Electrical Pumping

12.2.4 Optical Waveguide and Confinement

12.2.5 Temperature Behavior

12.2.6 Lateral Confinement

12.2.7 Near Field, Far Field

12.2.8 Distributed Feedback Lasers

12.2.9 Vertical-Cavity Surface-Emitting Laser

12.3 Solar Cells

12.3.1 Basic Working Principle

12.3.2 Solar Spectrum

12.3.3 Compound Semiconductors and Photovoltaics

12.3.4 Multi-Junction Solar Cell

12.3.5 Concentrator Cells

12.3.6 PV Systems with Highest Efficiency

13. Electronic Devices

13.1 Field-Effect Transistor

13.2 Heterobipolar Transistor