Nanoscale Redox Reaction at Metal Oxide Interface A Case Study on Schottky Contact and ReRAM 1st Edition by Takahiro Nagata ISBN 4431548491 978-4431548492

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ISBN 10: 4431548491 

ISBN 13: 978-4431548492

Author:  Takahiro Nagata

Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.  

The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.

In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.

Table of contents: 

1. General Introduction

2. Changes in Schottky Barrier Height Behavior of Pt–Ru Alloy Contacts on Single-Crystal ZnO

3. Surface Passivation Effect on Schottky Contact Formation of Oxide Semiconductors

4. Bias-Induced Interfacial Redox Reaction in Oxide-Based Resistive Random-Access Memory Structure

5. Switching Control of Oxide-Based Resistive Random-Access Memory by Valence State Control of Oxide

6. Combinatorial Thin-Film Synthesis for New Nanoelectronics Materials

7. General Summary

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Tags: Takahiro Nagata, Nanoscale Redox Reaction, Metal Oxide Interface, Schottky Contact